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| Datasheet File OCR Text: |
| PROCESS Power Transistor CP176 Central TM NPN - Amp/Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 240 PRINCIPAL DEVICE TYPES MJ15003 MULTI EPITAXIAL PLANAR 203 x 227 MILS 12.5 1.0 MILS 38 x 76 MILS 47 x 72 MILS Al - 50,000A Ag - 10,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central TM PROCESS CP176 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) |
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